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Publications (status 2013)

Enhanced photosynthetic activity in Spinacia oleracea by spectral modification with a photoluminescent light converting material.

Qi Xia, Miroslaw Batentschuk, Andres Osvet, Peter Richter, Donat P Häder, Juergen Schneider, Christoph J Brabec, Lothar Wondraczek, Albrecht Winnacker

Optics Express 11/2013; 21 Suppl 6:A909-16.

Optical bandgap enhancement of a-SiC through hydrogen incorporation and thermal annealing treatments

Liz M. Montañez, Jorge A. Guerra, Katia Zegarra, Stefan Kreppel,Francisco De Zela, Albrecht Winnacker, Roland Weingärtner

Proc SPIE 11/2013;

Dynamic Doping in Planar Ionic Transition Metal Complex-Based Light-Emitting Electrochemical Cells

Sebastian B. Meier, Stephan van Reenen, Bastien Lefevre, David Hartmann, Henk J. Bolink, Albrecht Winnacker, Wiebke Sarfert,Martijn Kemerink

Advanced Functional Materials 07/2013; 23(28)

Photoluminescent and storage properties of photostimulable core/shell type silicate nanoparticles

Andres Osvet, Miroslaw Batentschuk, Moritz Milde, Nils Lundt,Carsten Gellermann, Sofia Dembski, Albrecht Winnacker,Christoph J. Brabec

physica status solidi (c) 02/2013; 10(2):180-184.

Concentration Quenching of Tb³⁺ Doped SiC:H and AlN Thin Films in Photoluminescence and Cathodoluminescence Measurements

J. A. Guerra, F. Benz, L. Montañez, R. Grieseler, P. Schaaf, F. de Zela, A. Winnacker, H. P. Strunk, R. Weingärtner

2013 MRS Spring Meeting., San Francisco; 01/2013

Concentration quenching and thermal activation of the luminescence from terbium-dopeda-SiC:H andc-AlN thin films

J. Andres Guerra, Felix Benz, A. Ricardo Zanatta, Horst P. Strunk, Albrecht Winnacker, Roland Weingärtner

physica status solidi (c) 01/2013; 10(1):68-71.

Scintillators Based on {{CdWO}}_{4} and {{CdWO}}_{4} : {{Bi}} Single Crystalline Films

Yuriy Zorenko, Vitaliy Gorbenko, Taras Voznyak, Ivan Konstankevych, Volodymyr Savchyn, Miroslaw Batentschuk, Albrecht Winnacker, Christoph Josef Brabec

IEEE Transactions on Nuclear Science 10/2012; 59(5):2281-2285

Luminescent and scintillation properties of Lu3Al5O12:Sc single crystal and single crystalline films

Y. Zorenko, V. Gorbenko, T. Voznyak, V. Savchyn, S. Nizhankovskiy, A. Dan'ko, V. Puzikov, V. Laguta, J. A. Mares, M. Nikl, K. Nejezchleb, M. Batentschuk, A. Winnacker

Optical Materials 10/2012; 34(12):2080-2085

Dynamic doping and degradation in sandwich-type light-emitting electrochemical cells.

Sebastian B Meier, David Hartmann, Daniel Tordera, Henk J Bolink, Albrecht Winnacker, Wiebke Sarfert

Physical Chemistry Chemical Physics 07/2012; 14(31):10886-90

Faceting in AlN bulk crystal growth and its impact on optical properties of the crystals

Matthias Bickermann, Boris M. Epelbaum, Octavian Filip, Barbara Tautz, Paul Heimann, Albrecht Winnacker

physica status solidi (c) 03/2012; 9(3-4):449-452.

Triplet exciton transfer mechanism between phosphorescent organic dye molecules

Frank S. Steinbacher, Ralf Krause, Arvid Hunze, Albrecht Winnacker

physica status solidi (a) 02/2012; 209(2):340-346

Growth of AlN bulk crystals on SiC seeds: Chemical analysis and crystal properties

Matthias Bickermann, Octavian Filip, Boris M. Epelbaum, Paul Heimann, Martin Feneberg, Benjamin Neuschl, Klaus Thonke, Elke Wedler, Albrecht Winnacker

Journal of Crystal Growth 01/2012; 339(1):13–21

Photostimulable fluorescent nanoparticles for biological imaging

A. Osvet, M. Milde, S. Dembski, S. Rupp, C. Gellermann, M. Batentschuk, C.J. Brabec, A. Winnacker

MRS Online Proceeding Library 01/2012; 1342:73-78.

Thermally stimulated luminescence in aluminium nitride crystals

Matthias Bickermann, Sebastian Schuster, Boris M. Epelbaum,Octavian Filip, Paul Heimann, Shunro Nagata, Albrecht Winnacker

physica status solidi (c) 07/2011; 8(7-8).

Structural defects in aluminium nitride bulk crystals visualized by cathodoluminescence maps

Matthias Bickermann, Saskia Schimmel, Boris M. Epelbaum,Octavian Filip, Paul Heimann, Shunro Nagata, Albrecht Winnacker

physica status solidi (c) 07/2011; 8(7-8).

Bulk Growth of SiC – Review on Advances of SiC Vapor Growth for Improved Doping and Systematic Study on Dislocation Evolution

Sakwe Aloysius Sakwe, Mathias Stockmeier, Philip Hens, Ralf Müller, Desirée Queren, Ulrike Kunecke, Katja Konias, Rainer Hock, Andreas Magerl, Michel Pons, Albrecht Winnacker, Peter Wellmann

Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1, 03/2011: pages 1 - 31; , ISBN: 9783527629053

Determination of the optical bandgap and disorder energies of thin amorphous SiC and AlN films produced by radio frequency magnetron sputtering

J A Guerra, L Montañez, O Erlenbach, G Galvez, F De Zela, A Winnacker, R Weingärtner

Journal of Physics Conference Series 02/2011; 274(1):012113.

Synthesis and optical properties of luminescent core–shell structured silicate and phosphate nanoparticles

Sofia Dembski, Sabine Rupp, Moritz Milde, Carsten Gellermann,Marcel Dyrba, Stefan Schweizer, Miroslaw Batentschuk, Andres Osvet, Albrecht Winnacker

Optical Materials 01/2011; 33(7):1106-1110

Luminescent silicate core-shell nanoparticles: synthesis, functionalization, optical, and structural properties.

Sofia Dembski, Sabine Rupp, Carsten Gellermann, Miroslaw Batentschuk, Andres Osvet, Albrecht Winnacker

Journal of Colloid and Interface Science 01/2011; 358(1):32-8

Simplified, yellow, organic light emitting diode by co-evaporation of premixed dye molecules

F. S. Steinbacher, R. Krause, A. Hunze, A. Winnacker

Organic Electronics - ORG ELECTRON. 01/2011; 12(6):911-915.

Effects of growth direction and polarity on bulk aluminum nitride crystal properties

O. Filip, B. M. Epelbaum, M. Bickermann, P. Heimann, A. Winnacker

Journal of Crystal Growth 01/2011; 318(1):427-431

Emission pattern of an aluminium nitride target for radio frequency magnetron sputtering

G. Gálvez de la Puente, S. Zitzlsberger, J. A. Guerra Torres, O. Erlenbach, R. Weingärtner, F. De Zela, A. Winnacker

Journal of Physics Conference Series 01/2011; 274(1).

On-line monitoring of PVT SiC bulk crystal growth using digital x-ray imaging

P. J. Wellmann, M. Bickermann, M. Grau, D. Hofmann, T. L. Straubinger, A. Winnacker

MRS Online Proceeding Library 01/2011; 572.

Preparation of luminescent inorganic core/shell-structured nanoparticles

Moritz Milde, Sofia Dembski, Sabine Rupp, Carsten Gellermann,Gerhard Sextl, Miroslaw Batentschuk, Andres Osvet, Albrecht Winnacker

MRS Proceedings. 12/2010; 1342.

Luminescence of Mn2+ ions in Tb3Al5O12 garnet

Yu Zorenko, V. Gorbenko, T. Voznyak, M. Batentschuk, A. Osvet, A. Winnacker

Journal of Luminescence 03/2010; 130(3):380–386

Determination of the sputter rate variation pattern of a silicon carbide target for radio frequency magnetron sputtering using optical transmission measurements

G. Gálvez de la Puente, J. A. Guerra Torres, O. Erlenbach, M. Steidl, R. Weingärtner, F. De Zela, A. Winnacker

Materials Science and Engineering B-advanced Functional Solid-state Materials. 01/2010; 174(1):127-131.

Quantum yield of Eu2+ emission in (Ca1-xSrx)S:Eu light emitting diode converter at 20–420K

Qi Xia, Miroslaw Batentschuk, Andres Osvet, Albrecht Winnacker,Juergen Schneider

Radiation Measurements. 01/2010; 45:350-352.

Novel UV-emitting single crystalline film phosphors grown by LPE method

Y. Zorenko, V. Gorbenko, V. Savchyn, T. Voznyak, M. Nikl, J.A. Mares, A. Winnacker

Radiation Measurements. 01/2010;

Growth and luminescent properties of TbAlO3:Mn single crystalline films

Yu. Zorenko, V. Gorbenko, T. Voznyak, M. Batentschuk, A. Osvet, A. Winnacker

Phys. Status Solidi A 207(2010)4,967-973. 01/2010;

Thermal Activation and Cathodoluminescence Measurements of Tb³⁺ -Doped a -(SiC) 1-x (AlN) x Thin Films

Oliver Erlenbach, Gonzalo Gálvez, Jorge Andres Guerra, Francisco De Zela, Roland Weingärtner, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2010;

Bandgap engineering of the amorphous wide bandgap semiconductor (SiC) _{1- x} (AlN)_x doped with terbium and its optical emission properties

R. Weingärtner, J. A. Guerra Torres, O. Erlenbach, G. Gálvez de la Puente, F. De Zela, A. Winnacker

Materials Science and Engineering B-advanced Functional Solid-state Materials. 01/2010; 174(1):114-118.

Determination of the Optical Bandgap of Thin Amorphous (SiC)_1-x (AlN) _x Films

Jorge Andres Guerra, Anja Winterstein, Oliver Erlenbach, Gonzalo Gálvez, Francisco De Zela, Roland Weingärtner, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2010;

Growth and luminescent properties of TbAlO₃ : Mn single-crystalline films

Yu. Zorenko, V. Gorbenko, T. Vozniak, M. Batentschuk, A. Osvet, A. Winnacker

physica status solidi (a) 01/2010; 207(4):967-973.

Sublimation growth of bulk crystals of AlN-rich (AlN)_x(SiC)_1-x solid solutions

Matthias Bickermann, Octavian Filip, Boris M. Epelbaum, Paul Heimann, Albrecht Winnacker

physica status solidi (c) 01/2010; 7:1746-1748.

Quality Control and Electrical Properties of Thin Amorphous (SiC)_1-x (AlN) _x Films Produced by Radio Frequency Dual Magnetron Sputtering

G. Gálvez de la Puente, Oliver Erlenbach, Jorge Andres Guerra, T. Hupfer, M. Steidl, Francisco De Zela, Roland Weingärtner, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2010;

UV transparent single-crystalline bulk AlN substrates

Matthias Bickermann, Boris M. Epelbaum, Octavian Filip, Paul Heimann, Shunro Nagata, Albrecht Winnacker

physica status solidi (c) 01/2010; 7(1):21-24.

Biotemplating of BaFBr:Eu²⁺ for X-ray storage phosphor applications

M.H. Kostova, M. Batentschuk, F. Goetz-Neunhoeffer, S. Gruber, A. Winnacker, P. Greil, C. Zollfrank

Materials Chemistry and Physics 01/2010; 123(1):166-171.

Crystal growth of mixed AlN–SiC bulk crystals

Octavian Filip, Matthias Bickermann, Boris M. Epelbaum, Paul Heimann, Albrecht Winnacker

Journal of Crystal Growth 01/2010; 312(18):2522-2526.

Deep-UV transparent bulk single-crystalline AlN substrates

Matthias Bickermann, Boris M. Epelbaum, Octavian Filip, Paul Heimann, Martin Feneberg, Shunro Nagata, Albrecht Winnacker

physica status solidi (c) 01/2010; 7:1743-1745.

Creation of storage centers in CsBr:Eu2+ needle image plates by vacuum ultraviolet radiation

M. Weidner, M. Batentschuk, A. Osvet, A. Winnacker, J. P. Tahon,P. Leblans

Journal of Applied Physics 10/2009

Memory and neural networks on the basis of color centers in solids.

Albrecht Winnacker, Andres Osvet

Biological Chemistry 09/2009; 390(11):1133-8

Point defect content and optical transitions in bulk aluminum nitride crystals

Matthias Bickermann, Boris M. Epelbaum, Octavian Filip, Paul Heimann, Shunro Nagata, Albrecht Winnacker

physica status solidi (b) 06/2009; 246(6):1181-1183.

ChemInform Abstract: Synthesis, Crystal Structures and Luminescence Properties of the Eu 3+ -Doped Yttrium Oxotellurates(IV) Y2Te 4O11 and Y2Te5O13

Parick Hoess, Andres Osvet, Frank Meister, Miroslaw Batentschuk, Albrecht Winnacker, Thomas Schleid

ChemInform 01/2009; 40(5).

Seeded Growth of AlN on (0001)Plane 6H-SiC Substrates

Octavian Filip, Boris M. Epelbaum, Matthias Bickermann, Paul Heimann, S. Nagata, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2009;

Performance and stability of poly(phenylene vinylene) based polymer light emitting diodes with caesium carbonate cathode

Riikka Suhonen, Ralf Krause, Fryderyk Kozlowski, Wiebke Sarfert,Ralph Pätzold, Albrecht Winnacker

Organic Electronics 01/2009; 10(2):280-288.

Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals

Octavian Filip, Boris M. Epelbaum, Juan Li, Matthias Bickermann,Xian Gang Xu, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2009;

Biological Templating: Bioinspired Design of SrAl 2 O 4 :Eu 2+ Phosphor (Adv. Funct. Mater. 4/2009)

Mariya H. Kostova, Cordt Zollfrank, Miroslaw Batentschuk,Friedlinde Goetz-Neunhoeffer, Albrecht Winnacker, Peter Greil

Advanced Functional Materials 01/2009; 19(4).

Bioinspired Design of SrAl₂O₄:Eu²⁺ Phosphor

Mariya H. Kostova, Cordt Zollfrank, Miroslaw Batentschuk,Friedlinde Goetz-Neunhoeffer, Albrecht Winnacker, Peter Greil

Advanced Functional Materials 12/2008; 19(4):599 - 603.

High efficient two color white phosphorescent organic light emitting diode

S. Seidel, R. Krause, A. Hunze, G. Schmid, F. Kozlowski, T. Dobbertin, A. Winnacker

Journal of Applied Physics 10/2008;

Synthesis, crystal structures and luminescence properties of the Eu3+-doped yttrium oxotellurates(IV) Y2Te4O11 and Y2Te5O13

Patrick Höss, Andres Osvet, Frank Meister, Miroslaw Batentschuk, Albrecht Winnacker, Thomas Schleid

Journal of Solid State Chemistry 10/2008; 181(10):2783–2788.

Observation of the triplet metastable state of shallow donor pairs in AlN crystals with a negative-U behavior: a high-frequency EPR and ENDOR Study.

Sergei B Orlinskii, Jan Schmidt, Pavel G Baranov, Matthias Bickermann, Boris M Epelbaum, Albrecht Winnacker

Physical Review Letters 06/2008; 100(25):256404.

Bulk and epitaxial growth of micropipe-free silicon carbide on basal and rhombohedral plane seeds

B. M. Epelbaum, O. Filip, A. Winnacker

physica status solidi (b) 06/2008; 245(7):1257 - 1271.

Polarization-dependent below band-gap optical absorption of aluminum nitride bulk crystals

Matthias Bickermann, Andreas Münch, Boris M. Epelbaum,Octavian Filip, Paul Heimann, Shunro Nagata, Albrecht Winnacker

Journal of Applied Physics 04/2008; 103(7):073522-073522-3.

Structural properties of aluminum nitride bulk single crystals grown by PVT

M. Bickermann, B. M. Epelbaum, O. Filip, P. Heimann, S. Nagata, A. Winnacker

physica status solidi (c) 03/2008; 5(6):1502 - 1504.

Optical analysis of down-conversion OLEDs

Benjamin Krummacher, Markus Klein, Norwin von Malm, Albrecht Winnacker

Proc SPIE 02/2008;

Luminescence and Tb³⁺–Ce³⁺–Eu³⁺ ion energy transfer in single-crystalline films of Tb₃Al₅O₁₂:Ce,Eu garnet

Y. Zorenko, V. Gorbenko, T. Voznyak, M. Batentschuk, A. Osvet, A. Winnacker

Journal of Luminescence 01/2008;

Ultrasonic Microspectroscopy Characterization of AlN Single Crystals

Yuji Ohashi, Mototaka Arakawa, Jun-ichi Kushibiki, Boris M. Epelbaum, Albrecht Winnacker

Applied Physics Express - APPL PHYS EXPRESS. 01/2008; 1.

High Efficiency PPV-Based Polymer Light Emitting Diodes With Cs₂CO₃ Cathode

Riikka Suhonen, Ralf Krause, Fryderyk Kozlowski, Wiebke Sarfert,Ralph Päetzold, Albrecht Winnacker

MRS Online Proceedings Library. 01/2008; 1115.

Chapter: New concepts for information storage based on color centers

A. Winnacker

06/2007: pages 335-349;

Initial growth stage in PVT growth of AlN on SiC substrates: Influence of Al2O3

Paul Heimann, C. Pfeiffer, M. Bickermann, B. M. Epelbaum, S. Nagata, A. Winnacker

physica status solidi (c) 05/2007; 4(7):2223 - 2226.

Development of natural habit of large free-nucleated AlN single crystals

B. M. Epelbaum, S. Nagata, M. Bickermann, P. Heimann, A. Winnacker

physica status solidi (b) 04/2007; 244(6):1780 - 1783

Impact of Joule heating on the brightness homogeneity of organic light emitting devices

C. Garditz, A. Winnacker, F. Schindler, R. Paetzold

Applied Physics Letters 04/2007

Correlation of the dielectric constant and the PSL-sensitivity in CsBr:Eu image plates

G. Schierning, M. Batentschuk, A. Winnacker, L. Struye, J.-P. Tahon, P. Leblans

Radiation Measurements 04/2007; 42(4-5):657-660

Correlation of the dielectric properties and the PSL-sensitivity in CsBr:Eu image plates

G. Schierning, M. Batentschuk, A. Osvet, A. Winnacker, L. Stuye,J.-P. Tahon, P. Leblans

Radiation Measurements - RADIAT MEAS. 01/2007; 42(4):657-660.

Eu 2 + luminescence in the EuAl 2 O 4 concentrated phosphor

F. Meister, M. Batentschuk, S. Dröscher, A. Osvet, A. Stiegelschmitt, M. Weidner, A. Winnacker

- RADIAT MEAS. 01/2007; 42(4):771-774.

Similarities and differences in sublimation growth of SiC and AlN

B.M. Epelbaum, M. Bickermann, S. Nagata, P. Heimann, O. Filip, A. Winnacker

Journal of Crystal Growth 01/2007; 305(2):317-325

Storage efficiency of BaFBr:Eu ²⁺ image plates irradiated by swift heavy ions

M. Batentschuk, A. Winnacker, K. Schwartz, C. Trautmann

Journal of Luminescence 01/2007; 125(1):40-44.

Temperature and pressure dependence of the homogeneous width of ⁷F₀–⁵D₀ electronic transition in Sm²⁺-doped sodium borate glass

Anatoli Kuznetsov, Urmo Visk, Artur Suisalu, Arlentin Laisaar, Jaak Kikas, Andres Osvet, Albrecht Winnacker

Journal of Luminescence 01/2007

Electrical, optical and morphological properties of nanoparticle indium–tin–oxide layers

Michael Gross, Albrecht Winnacker, Peter J. Wellmann

Thin Solid Films 01/2007; 515(24):8567-8572

Eu²⁺ luminescence in the EuAl₂O₄ concentrated phosphor

F. Meister, M. Batentschuk, S. Droscher, A. O, A Osvet,F. Stiegelschmitt, M. Weidner, A. Winnacker

Radiation Measurements - RADIAT MEAS. 01/2007; 42:771-774.

6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray Diffraction

Matthias Stockmeier, Rainer Hock, Octavian Filip, Boris M. Epelbaum, Albrecht Winnacker, Andreas Magerl

Materials Science Forum - MATER SCI FORUM. 01/2007;

Luminescence spectroscopy of Eu 2 + in CsBr:Eu needle image plates (NIPs)

M. Weidner, M. Batentschuk, F. Meister, A. Osvet, A. Winnacker,J.-P. Tahon, P. Leblans

Radiation Measurements 01/2007; 42(4):661-664

Defect-selective etching of aluminum nitride single crystals

M. Bickermann, S. Schmidt, B. M. Epelbaum, P. Heimann, S. Nagata, A. Winnacker

physica status solidi (c) 01/2007; 4(7):2609-2612.

Growth of 4H-SiC on rhombohedral (0 1 1¯ 4) plane seeds

J. Li, O. Filip, B. M. Epelbaum, X. Xu, M. Bickermann, A. Winnacker

Journal of Crystal Growth 01/2007; 308(1):41-49

Wet KOH etching of freestanding AlN single crystals

M. Bickermann, S. Schmidt, B. M. Epelbaum, P. Heimann, S. Nagata, A. Winnacker

Journal of Crystal Growth 01/2007; 300(2):299-307

Growth and Characterization of High-Quality 6H-SiC (0115) Bulk Crystals

Octavian Filip, Boris M. Epelbaum, Matthias Bickermann, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2007;

Spectral diffusion broadening by soft local modes in Sm²⁺-doped sodium borate glass

Urmo Visk, A. Suisalu, J. Kikas, A. Osvet, A. Winnacker

Journal of Luminescence 01/2007; 127(1):19-21

Energy transfer to Ce³⁺ ions in Tb₃Al₅O₁₂:Ce single crystalline films

Y. Zorenko, T. Voznyak, V. Vistovsky, T. Zorenko, S. Nedilko, M. Batentschuk, A. Osvet, A. Winnacker, G. Zimmerer, V. Kolobanov,D. Spassky

Radiation Measurements. 01/2007; 42(s 4–5):648–651.

Synthesis and spectroscopic investigations of Cu- and Pb-doped colloidal ZnS nanocrystals.

Oliver Ehlert, Andres Osvet, Miroslaw Batentschuk, Albrecht Winnacker, Thomas Nann

The Journal of Physical Chemistry B 12/2006; 110(46):23175-8

Erratum: ``Influence of dopant compounds on the storage mechanism of CaS:Eu²⁺, Sm³⁺'' [J. Appl. Phys. 100, 073701 (2006)]

M. Weidner, A. Osvet, G. Schierning, M. Batentschuk, A. Winnacker

Journal of Applied Physics 12/2006; 100(12):9903

The initial growth stage in PVT growth of aluminum nitride

P. Heimann, B. M. Epelbaum, M. Bickermann, S. Nagata, A. Winnacker

physica status solidi (c) 05/2006; 3(6):1575 - 1578.

Growth and luminescence of CsBr:Cu crystals

Yu. Zorenko, R. Turchak, T. Voznyak, V. Savchin, M. Batenchuk, A. Winnacker

Crystallography Reports 02/2006; 51(2):329-333

Cathodoluminescence Measurements and Thermal Activation of Rare Earth Doped (Tb ³⁺ , Dy ³⁺ and Eu ³⁺ ) aSiC Thin Films Prepared by rf Magnetron Sputtering

Roland Weingärtner, Oliver Erlenbach, F. de Zela, Albrecht Winnacker, Isabel Brauer, Horst P. Strunk

Materials Science Forum - MATER SCI FORUM. 01/2006;

General method to evaluate substrate surface modification techniques for light extraction enhancement of organic light emitting diodes

B C Krummacher, M K Mathai, V Choong, S A Choulis, F So, A Winnacker

Journal of Applied Physics 01/2006; 100(5)

Article: Influence of charge balance and microcavity effects on resultant efficiency of organic-light emitting devices

Benjamin Krummacher, Mathew K. Mathai, Vi-En Choong, Stelios A. Choulis, Franky So, Albrecht Winnacker

Organic Electronics. 01/2006;

Polymer light-emitting devices for large-area lighting

C. Gärditz, R. Pätzold, D. Buchhauser, J. Wecker, A. Winnacker

Proc SPIE 01/2006;

Thermal activation, cathodo- and photoluminescence measurements of rare earth doped (Tm,Tb,Dy,Eu,Sm,Yb) amorphous/nanocrystalline AlN thin films prepared by reactive rf-sputtering

R. Weingärtner, O. Erlenbach, A. Winnacker, A. Welte, I. Brauer, H. Mendel, H.P. Strunk, C.T.M. Ribeiro, A.R. Zanatta

Optical Materials. 01/2006; 28:790-793.

Trapping and charge transport in organic LEDs

Carsten A. Tschamber, Arvid Hunze, Dirk Buchhauser, Wiebke Sarfert, Christoph Gärditz, Oliver Weiss, Ralph Pätzold, Dmitry Poplavskyy, Karsten Heuser, Albrecht Winnacker

Proc SPIE 10/2005;

Luminescence and storage properties of CsBr:Cu and CsBr:CuO crystals

Yu. Zorenko, R. Turchak, T. Voznjak, M. Batentschuk, A. Osvet, A. Winnacker

Physica Status Solidi (A) Applications and Materials 09/2005; 202(13):2537 - 2542

Comparative study of initial growth stage in PVT growth of AlN on SiC and on native AlN substrates

B. M. Epelbaum, P. Heimann, M. Bickermann, A. Winnacker

physica status solidi (c) 03/2005; 2(7):2070 - 2073.

Orientation-dependent phonon observation in single-crystalline aluminum nitride

M. Bickermann, B. M. Epelbaum, P. Heimann, Z. G. Herro, A. Winnacker

Applied Physics Letters 03/2005; 86(13):131904-131904-3

Structural properties of AlN crystals grown by physical vapor transport

M. Bickermann, B. M. Epelbaum, A. Winnacker

physica status solidi (c) 03/2005; 2(7):2044 - 2048.

Growth of 6H-SIC crystals along the [0 1 1¯ 5] direction

Z. G. Herro, B. M. Epelbaum, M. Bickermann, C. Seitz, A. Magerl, A. Winnacker

Journal of Crystal Growth 03/2005; 275(3-4):496-503

Growth and characterization of bulk AlN substrates grown by PVT

M. Bickermann, B. M. Epelbaum, M. Kazan, Z. Herro, P. Masri, A. Winnacker

Physica Status Solidi (A) Applications and Materials 02/2005; 202(4):531 - 535

Persistent spectral hole burning and nonselective photoionisation of Sm2+ in borate and borosilicate glasses

A. Osvet, E. Epelbaum, S. Emelianova, R. Weissmann, A. Winnacker

physica status solidi (c) 01/2005; 2(1):576 - 579.

In situ visualization of SiC physical vapor transport crystal growth

Peter Wellmann, Ziad Herro, Albrecht Winnacker, Roland Püsche,Martin Hundhausen, Pierre Masri, Alexey Kulik, Maxim Bogdanov,Sergey Karpov, Mark Ramm, Yuri Makarov

Journal of Crystal Growth 01/2005

Photoluminescence Study of In-Situ Rare Earth Doped PVT-Grown SiC Single Crystals

Holger Schmitt, Ralf Müller, Manfred Maier, Albrecht Winnacker,Peter J. Wellmann

Materials Science Forum - MATER SCI FORUM. 01/2005;

Growth of 6H–SIC crystals along the direction

Z.G. Herro, B.M. Epelbaum, M. Bickermann, C. Seitz, A. Magerl, A. Winnacker

Journal of Crystal Growth 01/2005; 275:496-503

SiC single crystal growth by a modified physical vapor transport technique

Peter Wellmann, Patrick Desperrier, Ralf Müller, Thomas Straubinger, Albrecht Winnacker, Francis Baillet, Elisabeth Blanquet, Jean Marc Dedulle, Michel Pons

Journal of Crystal Growth 01/2005; 275

[01-15] Grown 6H-SiC Bulk Crystals Investigated by High Energy Triple Axis X-Ray Diffraction

Christoph Seitz, Z. G. Herro, Boris M. Epelbaum, Albrecht Winnacker, Rainer Hock, Andreas Magerl

Materials Science Forum - MATER SCI FORUM. 01/2005;

Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions

Peter J. Wellmann, Thomas L. Straubinger, Patrick Desperrier, Ralf Müller, Ulrike Künecke, Sakwe Aloysius Sakwe, Holger Schmitt, Albrecht Winnacker, Elisabeth Blanquet, Jean Marc Dedulle,Michel Pons

Materials Science Forum - MATER SCI FORUM. 01/2005;

OLED lighting based on white broadband copolymer emitters

C. Gärditz, R. Paetzold, D. Buchhauser, R. Bathelt, G. Gieres, C. Tschamber, A. Hunze, K. Heuser, A. Winnacker, J. Amelung, D. Kunze

Proc SPIE 01/2005;

Approaches to seeded PVT growth of AIN crystals

B. M. Epelbaum, M. Bickermann, A. Winnacker

Journal of Crystal Growth 01/2005; 275(1)

LPE of Silicon Carbide Using Diluted SiGe Flux

Octavian Filip, Boris M. Epelbaum, Matthias Bickermann, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2005;

Laser-Microstructuring of Cathodes for OLED-Displays

Wiebke Sarfert, Christoph Ga¨rditz, Carsten Tschamber, Albrecht Winnacker, Dirk Buchhauser, Arvid Hunze, Ralph Paetzold,Karsten Heuser

SID Symposium Digest of Technical Papers 01/2005; 36(1).

Liquid phase homoepitaxial growth of 6H-SiC on ( 0 1 1 ¯ 5 ) oriented substrates

O. Filip, B. Epelbaum, Z. G. Herro, M. Bickermann, A. Winnacker

Journal of Crystal Growth 01/2005; 282(3):286-289

Modification of the micro-pulling-down method for high-temperature solution growth of miniature bulk crystals

B. M. Epelbaum, G. Schierning, A. Winnacker

Journal of Crystal Growth 01/2005; 275(1)

Investigation of lattice plane bending in large (0001)SiC crystals using high-energy X-ray technique

B. M. Epelbaum, Z. G. Herro, M. Bickermann, C. Seitz, A. Magerl,P. Masri, A. Winnacker

physica status solidi (c) 01/2005; 2(4):1288-1291.

The influence of lattice defects on fluorescence and phosphorescence in the europium aluminate EuAl2O4

G. Schierning, M. Batentschuk, A. Osvet, A. Stiegelschmitt, A. Winnacker

physica status solidi (c) 01/2005; 2(1):109-112.

Characterization of white-emitting copolymers for PLED displays

Dirk Buchhauser, Marcus Scheffel, Wolfgang Rogler, Carsten Tschamber, Karsten Heuser, Arvid Hunze, Guenter Gieres, Debora Henseler, Wolf Jakowetz, Karsten Diekmann, Albrecht Winnacker,Heinrich Becker

Proc SPIE 11/2004;

Micropipe healing in SiC wafers by liquid-phase epitaxy in Si–Ge melts

O. Filip, B. Epelbaum, M. Bickermann, A. Winnacker

Journal of Crystal Growth 10/2004; 271:142-150

Flexible polymeric light-emitting diodes

Ralph Paetzold, Debora Henseler, Karsten Heuser, Wiebke Sarfert, Georg Wittmann, Albrecht Winnacker

Proc SPIE 02/2004;

High-sensitivity permeation measurements on flexible OLED substrates

Ralph Paetzold, Debora Henseler, Karsten Heuser, Valentina Cesari, Wiebke Sarfert, Georg Wittmann, Albrecht Winnacker

Proc SPIE 02/2004;

In-Situ Er-Doping of SiC Bulk Single Crystals

Ralf Müller, Patrick Desperrier, Christoph Seitz, Matthias Weisser,Andreas Magerl, Manfred Maier, Albrecht Winnacker, Peter J. Wellmann

Materials Science Forum - MATER SCI FORUM. 01/2004;

Simultaneous excitation of Ce 3+ and Eu 3+ ions in Tb 3Al 5O 12

Miroslaw Batentschuk, Andres Osvet, Gabi Schierning, Andreas Klier, Jürgen Schneider, Albrecht Winnacker

Radiation Measurements - RADIAT MEAS. 01/2004; 38(4):539-543.

Natural growth habit of bulk AlN crystals

B.M. Epelbaum, C. Seitz, A. Magerl, M. Bickermann, A. Winnacker

Journal of Crystal Growth 01/2004

Effective increase of single-crystalline yield during PVT growth of SiC by tailoring of temperature gradient

Z. G. Herro, B. M. Epelbaum, M. Bickermann, P. Masri, A. Winnacker

Journal of Crystal Growth - J CRYST GROWTH. 01/2004; 262(1):105-112.

On the Origin of the Below BandGap Absorption Bands in n-Type (N) 4H- and 6H-SiC

Roland Weingärtner, Peter J. Wellmann, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2004;

Characterization of bulk AlN with low oxygen content

M. Bickermann, B.M. Epelbaum, A. Winnacker

Journal of Crystal Growth. 01/2004;

AFM investigation of interface step structures on PVT-grown (0 0 0 1)Si 6H–SiC crystals

Z. G. Herro, B. M. Epelbaum, R. Weingärtner, M. Bickermann, P. Masri, A. Winnacker

Journal of Crystal Growth - J CRYST GROWTH. 01/2004; 270(1):113-120.

Flux Growth of SiC Crystals from Eutectic Melt SiC-B 4 C

Boris M. Epelbaum, P. A. Gurzhiyants, Z. G. Herro, Matthias Bickermann, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2004;

Natural Crystal Habit and Preferential Growth Directions during PVT of Silicon Carbide

Z. G. Herro, Boris M. Epelbaum, Matthias Bickermann, Pierre M. Masri, Christoph Seitz, Andreas Magerl, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. – Silicon Carbide and Related Materials 2003

Uniform Axial Charge Carrier Concentration in PVT-Grown p-Type 6H SiC by Non-Uniform Distribution of Boron in the Powder Source

Z. G. Herro, Matthias Bickermann, Boris M. Epelbaum, Roland Weingärtner, Ulrike Künecke, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2004;

Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiC

Z. G. Herro, Boris M. Epelbaum, Matthias Bickermann, Pierre M. Masri, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2004;

Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source

Patrick Desperrier, Ralf Müller, Albrecht Winnacker, Peter J. Wellmann

Sublimation Growth of Bulk AlN Crystals: Process Temperature and Growth Rate

Boris M. Epelbaum, Matthias Bickermann, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2004;

Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic Resonance

Matthias Bickermann, K. Irmscher, Boris M. Epelbaum, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2004;

Structural, Optical and Electrical Properties of Bulk AlN Crystals Grown by PVT

Matthias Bickermann, Boris M. Epelbaum, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2004;

Permeation rate measurements by electrical analysis of calcium corrosion

R Paetzold, A Winnacker, D Henseler, V Cesari, K Heuser

Review of Scientific Instruments 12/2003; 74(12):5147-5150. ·

PVT growth of bulk AlN crystals with low oxygen contamination

M. Bickermann, B. M. Epelbaum, A. Winnacker

physica status solidi (c) 10/2003;

Precipitation-induced photostimulated luminescence in CsBr:Eu 2+

P. Hackenschmied, G. Schierning, M. Batentschuk, A. Winnacker

Journal of Applied Physics 06/2003

Performance of flexible polymeric light-emitting diodes under bending conditions

Ralph Paetzold, Karsten Heuser, Debora Henseler, Stephan Roeger, Georg Wittmann, Albrecht Winnacker

Applied Physics Letters 05/2003; 82(19):3342-3344

Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiC

Roland Weingärtner, Albrecht Winnacker, Peter J. Wellmann

Materials Science Forum - MATER SCI FORUM. 01/2003;

Investigation of mass transport during PVT growth of SiC by 13C labeling of source material

Z. G. Herro, P. J. Wellmann, R. Püsche, M. Hundhausen, L. Ley,M. Maier, P. Masri, A. Winnacker

Journal of Crystal Growth 01/2003; 258(3):261-267

Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC

Roland Weingärtner, Matthias Bickermann, Z. G. Herro, Ulrike Künecke, Sakwe Aloysius Sakwe, Peter J. Wellmann, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2003;

Monte Carlo modeling of storage phosphor plate readouts

R. Fasbender, H. Li, A. Winnacker

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment 01/2003; 512(3):610-618

On the preparation of vanadium doped PVT grown SiC boules with high semi-insulating yield

M. Bickermann, R. Weingärtner, A. Winnacker

Journal of Crystal Growth 01/2003; 254(3):390-399

Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient

Z. G. Herro, Matthias Bickermann, Boris M. Epelbaum, Pierre M. Masri, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2003;

Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth

Matthias Bickermann, Dieter Hofmann, Thomas L. Straubinger,Roland Weingärtner, Albrecht Winnacker

Materials Science Forum – Silicon Carbide and Related Materials 2002

Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals

Matthias Bickermann, Roland Weingärtner, Z. G. Herro, Dieter Hofmann, Ulrike Künecke, Peter J. Wellmann, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2003;

Seeded PVT Growth of Aluminum Nitride on Silicon Carbide

Boris M. Epelbaum, Matthias Bickermann, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2003;

Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, 13 C Labeling of Source Material and Numerical Modeling

Peter J. Wellmann, Z. G. Herro, M. Selder, F. Durst, Roland Püsche, Martin Hundhausen, Lothar Ley, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2003;

Emission Characteristics of OLEDs on Planar and Non-Planar Substrates

Marcus Scheffel, Jan Birnstock, Arvid Hunze, Ralph Paetzold,Lothar Rau, Wolfgang Rogler, Sven Voegele, Albrecht Winnacker

MRS Online Proceedings Library. 01/2003; 771.

Two-color photorefractive effect in Mg-doped lithium niobate.

Albrecht Winnacker, Roger M Macfarlane, Yasunori Furukawa,Kenji Kitamura

Applied Optics 09/2002; 41(23):4891-6

Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements

R. Weingärtner, P. J. Wellmann, M. Bickermann, D. Hofmann, T. L. Straubinger, A. Winnacker

Appl. Phys. Lett. 80, 70 (2002)

Structured alkali halides for medical applications

B. Schmitt, M. Fuchs, E. Hell, W. Knüpfer, P. Hackenschmied, A. Winnacker

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms 01/2002; 191:800-804

Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality

Boris M. Epelbaum, Dieter Hofmann, Matthias Bickermann, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2002;

Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method

Thomas L. Straubinger, Matthias Bickermann, Michael Rasp,Roland Weingärtner, Peter J. Wellmann, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2002;

Passive Matrix Displays Based on the New Red Emitting Dopant RedATDB

A. Hunze, M. Scheffel, J. Birnstock, J. Bla¨ssing, A. Kanitz, S. Rajoelson, W. Rogler, G. Wittmann, H. Hartmann, A. Winnacker

SID Symposium Digest of Technical Papers 01/2002; 33(1).

Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method

T.L. Straubinger, M. Bickermann, R. Weingärtner, P.J. Wellmann, A. Winnacker

Journal of Crystal Growth 01/2002; 240:117-123

Peter J. Wellmann, Z. G. Herro, Thomas L. Straubinger, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2002;

On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals

Matthias Bickermann, Dieter Hofmann, Thomas L. Straubinger,Roland Weingärtner, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2002;

Storage performance of X-ray irradiated doped CsBr

P. Hackenschmied, G. Zeitler, M. Batentschuk, A. Winnacker, B. Schmitt, M. Fuchs, E. Hell, W. Knüpfer

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms 01/2002; 191:163-167

Tape casting of storage phosphor BaFBr:Eu2+ for X-ray imaging

H Li, E Epelbaum, M Batentschuk, A Winnacker

Materials Science and Engineering B 01/2002

Screen-printed passive matrix displays and multicolor devices

Jan Birnstock, Joerg Blaessing, A. Hunze, M. Scheffel, Matthias Stoessel, Karsten Heuser, J. Woerle, Georg Wittmann, A. Winnacker

Proc SPIE 01/2002;

Energy transfer in Ba1-xSrxFBr:Eu storage phosphors as a function of Sr and Eu concentration

P. Hackenschmied, H. Li, E. Epelbaum, R. Fasbender, M. Batentschuk, A. Winnacker

Radiation Measurements 10/2001; 33(5):669-674

Screen-printed passive matrix displays based on light-emitting polymers

J. Birnstock, J. Blässing, A. Hunze, M. Scheffel, M. Stößel, K. Heuser, G. Wittmann, J. Wörle, A. Winnacker

Applied Physics Letters 06/2001; 78(24):3905-3907

Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC

R. Weingärtner, M. Bickermann, S. Bushevoy, D. Hofmann, M. Rasp, T.L. Straubinger, P.J. Wellmann, A. Winnacker

Materials Science and Engineering B 03/2001; 80(s 1–3):357–361

Impact of the metal cathode on the performance of polymer light-emitting diodes

Matthias Stoessel, Georg Wittmann, Karsten Heuser, Joerg Blaessing, Jan Birnstock, W. Rogler, W. Roth, A. Winnacker,Michael Inbasekaran, Mark T. Bernius, Weishi W. Wu, James J. O'Brien

Proc SPIE 02/2001;

Impact of source material on silicon carbide vapor transport growth process

P.J. Wellmann, D. Hofmann, L. Kadinski, M. Selder, T.L. Straubinger, A. Winnacker

Journal of Crystal Growth 01/2001

Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process

Peter J. Wellmann, Dieter Hofmann, L. Kadinski, M. Selder,Thomas L. Straubinger, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2001;

On the preparation of semi-insulating SiC bulk crystals by the PVT technique

M. Bickermann, D. Hofmann, T. L. Straubinger, R. Weingärtner, P. J. Wellmann, A. Winnacker

Applied Surface Science 01/2001; 184(1):84-89

Stability Criteria for 4H-SiC Bulk Growth

Thomas L. Straubinger, Matthias Bickermann, Dieter Hofmann,Roland Weingärtner, Peter J. Wellmann, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2001;

Effect of Al on the spectral and spectral-hole-burning properties of sodiumborate glasses doped with Sm 2+

A. Osvet, S. Emelianova, R. Weissmann, A. Winnacker

Journal of Luminescence - J LUMINESC. 01/2001; 94:579-586.

Study of Boron Incorporation During PVT Growth of p-type SiC Crystals

Matthias Bickermann, Dieter Hofmann, Michael Rasp, Thomas L. Straubinger, Roland Weingärtner, Peter J. Wellmann, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2001;

Incorporation of boron and vanadium during PVT growth of 6H-SiC crystals

M. Bickermann, B. M. Epelbaum, D. Hofmann, T. L. Straubinger, R. Weingärtner, A. Winnacker

Journal of Crystal Growth 01/2001; 233(1):211-218. · 1.55 Impact Factor

Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC

Roland Weingärtner, Matthias Bickermann, Dieter Hofmann,Michael Rasp, Thomas L. Straubinger, Peter J. Wellmann, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2001

Micropipe and Macrodefect Healing in SiC Crystals during Liquid Phase Processing

Boris M. Epelbaum, Dieter Hofmann, U. Hecht, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2001;

Electrical and thermal conductivity of liquid phase sintered SiC

Eduard Volz, Andreas Roosen, Wolfgang Hartung, Albrecht Winnacker

Journal of the European Ceramic Society 01/2001; 21(10):2089-2093

Investigation of a PVT SiC-Growth Set-up Modified by an Additional Gas Flow

Thomas L. Straubinger, Peter J. Wellmann, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2001;

Optical and ODMR investigation of anti-site defects in GaP

B K Meyer, Th Nagleiter, J -M Spaeth, G Strauch, Th Zell, A Winnacker, R H Bartram

Journal of Physics C Solid State Physics 11/2000; 18(7):1503.

Electron injection and transport in 8-hydroxyquinoline aluminum

M Stößel, J Staudigel, F Steuber, J Blässing, J Simmerer, A Winnacker, H Neuner, D Metzdorf, H.-H Johannes, W Kowalsky

Synthetic Metals 06/2000

Cathode-induced luminescence quenching in polyfluorenes

M. Stoessel, G. Wittmann, J. Staudigel, F. Steuber, J. Blässing, W. Roth, H. Klausmann, W. Rogler, J. Simmerer, A. Winnacker, M. Inbasekaran, E. P. Woo

Journal of Applied Physics 04/2000; 87(9):4467-4475

Spectral hole burning in Sm²⁺-doped alkaliborate glasses and Tb³⁺-doped silicate and borate glasses

Andres Osvet, Svetlana Emelianova, Rudolph Weissmann, Valeriy I Arbuzov, Albrecht Winnacker

Journal of Luminescence 04/2000

Space-charge-limited electron currents in 8-hydroxyquinoline aluminum

M. Stößel, J. Staudigel, F. Steuber, J. Blässing, J. Simmerer, A. Winnacker

Applied Physics Letters 01/2000; 76(1):115-117

Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions

Thomas L. Straubinger, Matthias Bickermann, M. Grau, Dieter Hofmann, L. Kadinski, Stephan G. Müller, M. Selder, Peter J. Wellmann, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2000;

Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals

Dieter Hofmann, Matthias Bickermann, Wolfgang Hartung, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2000;

Top-seeded Solution Growth of Bulk SiC: Search for Fast Growth Regimes

Boris M. Epelbaum, Dieter Hofmann, M. Müller, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/2000;

Spectral hole burning in Sm 2+-doped alkaliborate glasses and Tb ³⁺-doped silicate and borate glasses

Andres Osvet, Svetlana Emelianova, Rudolph Weissmann, Valeriy I Arbuzov, Albrecht Winnacker

Journal of Luminescence - J LUMINESC. 01/2000; 86(3):323-332.

In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging

P.J Wellmann, M Bickermann, D Hofmann, L Kadinski, M Selder,T.L Straubinger, A Winnacker

Journal of Crystal Growth 01/2000

White Light Emission from Organic LEDs Utilizing Spiro Compounds with High-Temperature Stability

F. Steuber, J. Staudigel, M. Stössel, J. Simmerer, A. Winnacker, H. Spreitzer, F. Weissörtel, J. Salbeck

Advanced Materials 12/1999; 12(2):130 - 133

Reduced operating voltage of organic electroluminescent devices by plasma treatment of the indium tin oxide anode

F. Steuber, J. Staudigel, M. Stössel, J. Simmerer, A. Winnacker

Applied Physics Letters 06/1999; 74(23):3558-3560

Impact of the cathode metal work function on the performance of vacuum-deposited organic light emitting-devices

M. Stössel, J. Staudigel, F. Steuber, J. Simmerer, A. Winnacker

Applied Physics A 03/1999; 68(4):387-390

Sublimation growth of silicon carbide bulk crystals: experimental and theoretical studies on defect formation and growth rate augmentation

D Hofmann, M Bickermann, R Eckstein, M Kölbl, St.G Müller, E Schmitt, A Weber, A Winnacker

Journal of Crystal Growth 01/1999

Analysis of electronic levels in SiC: V, N, Al powders and crystals using thermally stimulated luminescence

W Hartung, M Rasp, D Hofmann, A Winnacker

Materials Science and Engineering B-advanced Functional Solid-state Materials. 01/1999; 61:102-106.

Charge injection barrier modification in organic LEDs

M. Stössel, J. Staudigel, F. Steuber, J. Simmerer, G. Wittmann, A. Kanitz, H. Klausmann, W. Rogler, W. Roth, J. Schumann, A. Winnacker

Physical Chemistry Chemical Physics 01/1999; 1(8):1791-1793

MBE of AlN on SiC and influence of structural substrate defects on epitaxial growth

D. G Ebling, M Rattunde, L Steinke, K. W Benz, A Winnacker

Journal of Crystal Growth 01/1999; 201(3):411-414

Analysis on defect generation during the SiC bulk growth process

D. Hofmann, E. Schmitt, M. Bickermann, M. Kölbl, P.J. Wellmann, A. Winnacker

Materials Science and Engineering: B. 01/1999;

Distribution of the deep acceptor Fe in semi-insulating InP in both its charge states

W Meier, H Ch Alt, T Vetter, J Völkl, A Winnacker

Semiconductor Science and Technology 12/1998; 6(4):297

Investigation of striations in doped InP wafers by scanned photoluminescence and spatially resolved SIMS

T Vetter, R Treichler, A Winnacker

Semiconductor Science and Technology 12/1998; 7(1):150

Experimental and Theoretical Analysis of the Hall-Mobility in N-Type Bulk 6H- and 4H-SiC

S. T. G. Müller, D. Hofmann, A. Winnacker

MRS Proceedings. 12/1998; 572.

The `fractional thermally stimulated current' (FTSC) method: application to deep impurity levels in semi-insulating InP

R Fasbender, G Hirt, M Thoms, A Winnacker

Semiconductor Science and Technology 12/1998; 11(6):935

On the role of nonstoichiometry on the photostimulated luminescence in Ba _(1- _x) Sr _xFBr:Eu

M Batentschuk, R Fasbender, P Hackenschmied, H Li, M Thoms, A Winnacker

Radiation Measurements 01/1998; 29(3):299-305

Experimental study of the admixture of continuum states to the discrete excited state of EL2 in GaAs

R. Kummer, C. Hecht, M. Thoms, A. Winnacker

Journal of Luminescence - J LUMINESC. 01/1998; 76:152-156.

Studies on SiC Liquid Phase Crystallization as Technique for SiC Bulk Growth

M. Müller, Matthias Bickermann, Dieter Hofmann, Arnd Dietrich Weber, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/1998;

Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals

Stephan G. Müller, Robert Eckstein, Wolfgang Hartung, Dieter Hofmann, M. Kölbl, Gerhard Pensl, Erwin Schmitt, Arnd Dietrich Weber, Albrecht Winnacker

Materials Science Forum 01/1998;

Growth stability of zinc selenide bulk crystals from solutions

A.-D. Weber, M. Müller, D. Hofmann, A. Winnacker

Journal of Crystal Growth 01/1998; 184:1048-1052

Persistent spectral-hole burning in SiC:V via excited-state absorption

C. Hecht, R. Kummer, A. Winnacker

Journal of Luminescence - J LUMINESC. 01/1998; 76:95-99.

Dislocation Content of Micropipes in SiC

J. Heindl, W. Dorsch, H. P. Strunk, St. G. Müller, R. Eckstein, D. Hofmann, A. Winnacker

Physical Review Letters 01/1998; 80(4):740-741

Persistent spectral-hole burning in the wide-gap semiconductor SiC doped with vanadium.

R Kummer, C Hecht, A Winnacker

Optics Letters 07/1997; 22(12):916-8

Response to “Comment on ‘Purely optical measurement of the resistivity distribution of semi-insulating InP:Fe by means of the photorefractive effect’ ’’ [Appl. Phys. Lett. 70, 1055 (1997)]

G. Wittmann, A. Winnacker

Applied Physics Letters 02/1997; 70(8)

Micopipes and polytypism as a source of lateral inhomogeneities in SiC substrates

S.G. Müller, R. Eckstein, D. Hofmann, E. Schmitt, W. Schoierer, A. Winnacker, W. Dorsch, H.P. Strunk

Materials Science and Engineering B 01/1997; 44:392

The kinetic growth model applied to micropipes in 6H-SiC

J. Heindl, W. Dorsch, R. Eckstein, D. Hofmann, T. Marek, St. G. Müller, H. P. Strunk, A. Winnacker

Diamond and Related Materials 01/1997; 6(10):1269-1271

High-resolution spectroscopy of the zero-phonon line of the deep donor EL2 in GaAs

C. Hecht, R. Kummer, M. Thoms, A. Winnacker

Physical Review B 01/1997; 55(20)

Formation of micropipes in SiC under kinetic aspects

J. Heindl, W. Dorsch, R. Eckstein, D. Hofmann, T. Marek, St. G. Müller, H. P. Strunk, A. Winnacker

Journal of Crystal Growth 01/1997; 179(3):510-514

Micropipes and polytypism as a source of lateral inhomogeneities in SiC substrates

S. G. Müller, R. Eckstein, D. Hofmann, E. Schmitt, W. Schoierer, A. Winnacker, W. Dorsch, H. P. Strunk

Materials Science and Engineering B-advanced Functional Solid-state Materials. 01/1997; 44(1):392-394.

SiC-bulk growth by physical-vapor transport and its global modelling

D. Hofmann, R. Eckstein, M. Kölbl, Y. Makarov, St.G. Müller, E. Schmitt, A. Winnacker, R. Rupp, R. Stein, J. Völkl

Journal of Crystal Growth 01/1997

Bulk Growth Of Silicon Carbide Crystals: Analysis Of Growth Rate And Crystal Quality

D. Hofmann, R. Eckstein, L. Kadinski, M. Kölbl, M. Müller, St. G. Müller, E. Schmitt, A. Weber, A. Winnacker

MRS Proceedings. 12/1996; 483.

Vanadium as a recombination center in 6H SiC

St.G. Müller, D. Hofmann, A. Winnacker, E.N. Mokhov, Y.A. Vodakov

Inst. Phys. Conf. Ser. 01/1996; 142:361.

Electronic and optical properties of vanadium doped silicon carbide crystals grown by the sublimation sandwich method

St.G. Muller, D. Hofmann, E.N. Mokhov, M.G. Ramm, A.D. Roenkov, Yu.A. Vodakov, A. Winnacker

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE; 01/1996

An Improved X-Ray Image Plate Detector for Diffractometry

M. Thoms, H. Burzlaff, A. Kinne, J. Lange, H. von Seggern, R. Spengler, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/1996;

Physics and application of x-ray storage phosphors

A. Winnacker

Proc SPIE 01/1996;

Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals

R. Eckstein, D. Hofmann, Y. Makarov, St. G. Müller, G. Pensl, E. Schmitt, A. Winnacker

MRS Proceedings. 12/1995; 423.

Article: On the Excitation Mechanism of Erbium and Ytterbium in the Quaternary Compounds InGaAsP

Albrecht Winnacker, Gerhard Pensl

MRS Proceedings. 12/1995; 422.

Article: Purely optical measurement of the resistivity distribution of semi-insulating InP:Fe by means of the photorefractive effect

G. Wittmann, A. Winnacker

Applied Physics Letters 08/1995

Acceptor-Hydrogen Interaction in Ternary III-V Semiconductors

A. Burchard, Manfred Deicher, Doris Forkel-Wirth, J. Freidinger, T. Kerle, R. Magerle, Wulf Pfeiffer, W. Prost, Peter J. Wellmann, Albrecht Winnacker

Materials Science Forum - MATER SCI FORUM. 01/1995;

On the sublimation growth of SiC bulk crystals: development of a numerical process model

Dieter Hofmann, Marcus Heinze, Albrecht Winnacker, Franz Durst,Lev Kadinski, Peter Kaufmann, Yuri Makarov, Michael Schäfer

Journal of Crystal Growth. 01/1995;

Effect of Pr-codoping on the X-ray induced afterglow of (Y,Gd)2O3:Eu

R. Jullien, N. Olivi-Tran, A. Hasmy, T. Woignier, J. Phalippou, D. Bourret, R. Sempere, W. Kostler, W. Rossner, B.C. Grabmaier, A. Winnacker

Journal of Physics and Chemistry of Solids 01/1995; 56(7)

Optical and thermal properties of electron- and hole-trapping sites in the x-ray storage phosphor RbI:X (X=Tl⁺, In⁺, Pb²⁺, Eu²⁺)

M. Thoms, H. von Seggern, A. Winnacker

Journal of Applied Physics 09/1994

Spatial distribution of charge carrier temperature and lifetime insemi-insulating InP:Fe, observed via photoluminescence spectroscopy

S. Waldmuller, M. Lang, P. Wellmann, A. Winnacker

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on; 04/1994

Charge transfer phenomena in semi-insulating InP:Fe

G. Wittmann, R. Fasbender, M. Thoms, A. Winnacker

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on; 05/1993

Recent developments in neutron detection

Christian Rausch, T. Buecherl, R. Gaehler, H. von Seggern, A. Winnacker

Proc SPIE 02/1993;

Investigation of the distribution of Fe in semi-insulating LEC-grown InP by photoluminescence and absorption imaging

G. Wittmann, F. Mosel, G. Mueller, A. Seidl, A. Winnacker

Materials Science and Engineering B-advanced Functional Solid-state Materials. 01/1993; 20:91-93.

Spatial correlation and photostimulability of defect centers in the x-ray-storage phosphor BaFBr:Eu2+

M Thoms, von Seggern H, A Winnacker

Physical review. B, Condensed matter 12/1991; 44(17):9240-9247

Characterization of InP wafers by use of a system for high resolution photoluminescence imaging

Th. Vetter, A. Winnacker

Research 01/1991; 6(5):1055-1060

The distribution of the deep donor EL2 and the net acceptor concentration in semi-insulating GaAs

A. Winnacker, F. Zach

Journal of Crystal Growth 01/1990; 103:275-281

Photostimulation mechanisms of x-ray-irradiated RbBr:Tl

H. von Seggern, A. Meijerink, T. Voigt, A. Winnacker

Journal of Applied Physics 12/1989

On the Electron Photoionization Cross-Section of EL2 in GaAs

A. Winnacker, F. X. Zach

Japanese Journal of Applied Physics 01/1989; 28:1135-1136

Optical Mapping of the Total EL2Concentration in Semi-Insulating GaAs-Wafers

F. X. Zach, A. Winnacker

Japanese Journal of Applied Physics 01/1989; 28:957-960

Effects of annealing on lifetime and deep-level photoluminescence in semi-insulating gallium arsenide

N. M. Haegel, A. Winnacker, K. Leo, W. W. Ruhle, S. Gisdakis

Journal of Applied Physics 11/1987

Photo production of surface recombination centers in gallium arsenide

N. M. Haegel, A. Winnacker

Applied Physics A 02/1987; 42(3):233-237

Longitudinal field quenching studies in KCl and KBr — Evidence for a precursor muonium state

F. N. Gygax, A. Schenck, A. J. Van Der Wal, R. Koch, A. Winnacker

Hyperfine Interactions 11/1986; 32(1):511-520

Electronic Zeeman and Stark spectroscopy of BaClF:Sm²⁺ using photon-gated hole burning.

RM Macfarlane, RM Shelby, A Winnacker

Physical review. B, Condensed matter 04/1986; 33(6):4207-4212

Spectroscopy of barium ions in He II

H. J. Reyher, H. Bauer, C. Huber, R. Mayer, A. Schäfer, A. Winnacker

Physics Letters A 01/1986; 115(5):238-244

Optical Detection of Magnetic Resonance in the Optically Excited 2 F 5/2 State of Yb 3+ in InP

R. Kallenbach, H. J. Reyher, J. Unruh, Albrecht Winnacker, H. Ennen

Materials Science Forum - MATER SCI FORUM. 01/1986;

Photon-gated hole burning: a new mechanism using two-step photoionization.

A Winnacker, R M Shelby, R M Macfarlane

Optics Letters 08/1985; 10(7):350-2

THE EFFECT OF ELECTRIC AND MAGNETIC FIELDS ON THE 7 F 0 ? 5 D 0 TRANSITION OF BaClF : Sm 2+ USING PHOTON-GATED HOLEBURNING

R. M. Macfarlane, R. M. Shelby, A. Winnacker

Le Journal de Physique Colloques 01/1985; 46.

Implantation of impurity ions into He II for optical spectroscopy purposes

H. Bauer, M. Hausmann, R. Mayer, H.J. Reyher, E. Weber, A. Winnacker

Physics Letters A 01/1985

Laser-enhanced electron-ion capture and antihydrogen formation

R. Neumann, H. Poth, A. Winnacker, A. Wolf

Zeitschrift für Physik A Hadrons and Nuclei 12/1983; 313(4).

Dynamic nuclear polarization of irradiated targets

M. L. Seely, A. Amittay, M. R. Bergstrom, S. K. Dhawan, V. W. Hughes, R. F. Oppenheim, K. P. Schüler, P. A. Souder, K. Kondo,S. Miyashita, K. Morimoto, S. J. St. Lorant, Y.-N. Guo, A. Winnacker

AIP Conference Proceedings. 03/1983; 95(1):526-533.

Measurement of the ligand hyperfine interaction in the excited ²F_5/2, E5/2 state of Tm2+ in CaF2 by optical detection of endor

G. Strauch, Th. Vetter, A. Winnacker

Physics Letters A 01/1983; 94:160-164

Optical detection of “endor without microwaves” in CaF₂ : Tm

A. Dieckmann, G. Strauch, Th. Vetter, A. Winnacker

Radiation Effects and Defects in Solids - RADIAT EFF DEFECT SOLID. 01/1983; 73:1-6.

Determination of the gradient elastic constant C44 of CaF2: A measurement of extremely small quadrupole coupling constants in a solid

D. Dubbers, H. Vogt, A. Winnacker

Dynamic nuclear polarization of irradiated targets

M.L. Seely, A. Amittay, M.R. Bergström, S.K. Dhawan, V.W. Hughes, R.F. Oppenheim, K.P. Schüler, P.A. Souder, K. Kondo, S. Miyashita, K. Morimoto, S.J. St. Lorant, Y.-N. Guo, A. Winnacker

Nuclear Instruments and Methods in Physics Research. 10/1982;

On the mechanisms of thermoluminescence and deformation luminescence in gamma-irradiated KCl

Roland Mayer, Albrecht Winnacker

Radiation Effects. 09/1982; 64(1-4):135-141.

Effect of colour centres (F'-centres) on the depolarization of positive mouns in KCl

W. Jacobs, H. Orth, G. zu Putlitz, W. Schäfer, J. Vetter, A. Winnacker, D. Herlach

Zeitschrift für Physik B Condensed Matter 01/1982; 47(2):95-98.

On the g -factor shift of the relaxed excited state of F -centres in alkali halides

H. J. Reyher, A. Winnacker

Zeitschrift für Physik B Condensed Matter 01/1982; 45(3):183-192.

The Conservation of Spin Memory during Radiationless Transitions of the F-Centre

Albrecht Winnacker, Hans J. Reyher

Journal of the Physical Society of Japan 01/1981; 50(9):3173-3174

Electron spin resonance and the spatial extension of the relaxed excited state ofF- andFA-centres

H. J. Reyher, K. Hahn, Th. Vetter, A. Winnacker

Zeitschrift für Physik B Condensed Matter 11/1979; 33(4):357-364.

Evidence for a second relaxed excited state of the f-centre in alkali halides from optically detected electron spin resonance

K. Hahn, H. J. Reyher, Th. Vetter, A. Winnacker

Physics Letters A 01/1979; 72:363-366

Very narrow nuclear magnetic resonance lines of 8Li(T12 = 0.84 s) in solids by double frequency irradiation, and the hyperfine structure anomaly ⁷Li-⁸Li

A. Winnacker, D. Dubbers, F. Fujara, K. Dörr, H. Ackermann, H. Grupp, P. Heitjans, A. Körblein, H.-J. Stöckmann

Physics Letters A 01/1978; 67:423-426

The role of spin-orbit coupling and hyperfine coupling in optical pumping of F-centres I

A. Winnacker, K. E. Mauser, B. Niesert

Zeitschrift für Physik B Condensed Matter 02/1977; 26(1):97-106.

The role of spin-orbit coupling and hyperfine coupling in optical pumping of F-centres II

K. E. Mauser, B. Niesert, A. Winnacker

Zeitschrift für Physik B Condensed Matter 02/1977; 26(1):107-114.

Electron spin resonance in the relaxed excited state of F-centres detected via saturated optical pumping

K. Hahn, K. Mauser, H. Reyher, A. Winnacker

Physics Letters A 01/1977; 63(2):151-154

Nuclear moments of the ß-emitters 108Ag and 110Ag

A. Winnacker, H. Ackermann, D. Dubbers, M. Grupp, P. Heitjans,H.-J. Stöck-Mann

Nuclear Physics A 01/1976; 261(2):261-268

Units of Matter. (Book Reviews: Atomic Physics 4. Proceedings of a conference, Heidelberg, Germany, July 1974)

G. zu Putlitz, A. Winnacker

Science 01/1976; 192

Optical pumping in different regions of the F centre absorption band

K.E. Mauser, B. Niesert, A. Winnacker

Physics Letters A 08/1975; 54(1):78–80

Relaxation and deorientation of ¹¹⁰Ag( T_1/2=24.4s) nuclei produced by capture of polarized neutrons in the silver halides

J. Mertens, H. Ackermann, D. Dubbers, P. Heitjans, A. Winnacker,P. von Blanckenhagen

Zeitschrift für Physik A Hadrons and Nuclei 01/1973; 262(3):189-210.

Spin Mixing and Magnetic Circular Dichroism in the Absorption Band of F Centers-A Theoretical Investigation of Electron-Spin Memory

A. Winnacker

Physical Review B 07/1972; 6(3).

Relaxation phenomena and nuclear magnetic resonance of 116 In( T 1/2 =14s) produced by capture of polarized neutrons in the indium III–V compounds

A. Winnacker, H. Ackermann, D. Dubbers, J. Mertens, P. von Blanckenhagen

Zeitschrift für Physik A Hadrons and Nuclei 01/1971; 244(4):289-311.

Measurement of Hyperfine Structure in the Relaxed-Excited State of the F Center in KI by Optical Triple Resonance

L. F. Mollenauer, S. Pan, A. Winnacker

Physical Review Letters 01/1971; 26(26):1643-1647

Beta decay anisotropy and nuclear magnetic resonance of 14 s ¹¹⁶In produced by capture of polarized neutrons

H. Ackermann, D. Dubbers, J. Mertens, A. Winnacker, P. von Blanckenhagen

Physics Letters B - PHYS LETT B. 01/1969; 29(8):485-486.

Measurement of the nuclear magnetic moment of ¹¹⁰Ag( T_1/2=24.4 s)

H. Ackermann, D. Dubbers, J. Mertens, A. Winnacker, P. von Blanckenhagen

Zeitschrift für Physik A Hadrons and Nuclei 01/1969; 228(5):329-331.

Frequency shifts of optical double resonance signals by multiple coherent scattering

E.-W. Otten, A. Winnacker

Physics Letters A - PHYS LETT A. 01/1966; 23(7):462-463.

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